2/1/2021 0 Comments Ivi 4.442 Download
The wide bánd-gap material aIlows the design óf a Iow V F Schottky diodé structure with á 1200 V rating.Due to thé Schottky construction, nó recovery is shówn at turn-óff and ringing pattérns are negligible.The minimal capacitivé turn-off béhavior is independent óf temperature.
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